We demonstrate a hybrid device architecture where the charge states in adouble quantum dot (DQD) formed in a Si/SiGe heterostructure are read out usingan on-chip superconducting microwave cavity. A quality factor Q = 5,400 isachieved by selectively etching away regions of the quantum well and byreducing photon losses through low-pass filtering of the gate bias lines.Homodyne measurements of the cavity transmission reveal DQD charge stabilitydiagrams and a charge-cavity coupling rate g_c/2pi = 23 MHz. These measurementsindicate that electrons trapped in a Si DQD can be effectively coupled tomicrowave photons, potentially enabling coherent electron-photon interactionsin silicon.
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